производитель
Renesas Electronics
DESCRIPTION
The µPA1814 is a switching device which can be driven directly by a 4 V power source.
The µPA1814 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
FEATURES
• Can be driven by a 4 V power source
• Low on-state resistance
RDS(on)1 = 16 mΩ MAX. (VGS = –10 V, ID = –3.5 A)
RDS(on)2 = 24 mΩ MAX. (VGS = –4.5 V, ID = –3.5 A)
RDS(on)3 = 27 mΩ MAX. (VGS = –4.0 V, ID = –3.5 A)
• Built-in G-S protection diode against ESD
Номер в каталоге
Компоненты Описание
PDF
производитель
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology