DESCRIPTION
This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application.

FEATURES
• Dual MOS FET chips in small package
• 2.5 V gate drive type low on-state resistance
    RDS(on)1 = 30 mΩ (MAX.) (VGS = 4.5 V, ID = 3.0 A)
    RDS(on)2 = 40 mΩ (MAX.) (VGS = 2.5 V, ID = 3.0 A)
• Low Ciss : Ciss = 1100 pF (TYP.)
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)