Description
This product is Dual N-Channel MOS Field Effect Transistor designed for power management application of notebook computers, and Li-ion battery application.

FEATUREs
• Dual MOS FET chips in small package
• 2.5 V gate drive type and low on-resistance
    RDS(on)1 = 23 mΩ (MAX.) (VGS = 4.5 V, ID = 3.5 A)
    RDS(on)2 = 32 mΩ (MAX.) (VGS = 2.5 V, ID = 3.5 A)
• Low Ciss Ciss = 750 pF Typ.
• Built-in G-S protection diode
• Small and surface mount package (Power SOP8)