2.5V Drive Nch+Nch MOS FET

FEATUREs
1) Two 2SK3018 transistors in a single UMT package.
2) The MOS FET elements are independent, eliminating mutual interference.
3) Mounting cost and area can be cut in half.
4) Low On-resistance.
5) Low voltage drive (2.5V drive) makes this device ideal for portable equipment.

Structure
Silicon N-channel MOS FET

APPLICATIONs
Interfacing, switching (30V, 100mA)