datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Vishay Semiconductors  >>> TSUS5201 PDF

TSUS5201 Даташит - Vishay Semiconductors

TSUS5200 image

Номер в каталоге
TSUS5201

Компоненты Описание

Other PDF
  2007   2008   2009  

PDF
DOWNLOAD     

page
5 Pages

File Size
95.9 kB

производитель
Vishay
Vishay Semiconductors Vishay

DESCRIPTION
TSUS5200 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue-gray tinted plastic package.


FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): Ø 5
• Leads with stand-off
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 15°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC


APPLICATIONS
• Infrared remote control and free air transmission systems with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors

Page Link's: 1  2  3  4  5 

Номер в каталоге
Компоненты Описание
PDF
производитель
Infrared Emitting Diode, 950 nm, GaAs
Vishay Siliconix
Infrared Emitting Diode, 950 nm, GaAs
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2015 )
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2009 )
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2009 )
Vishay Siliconix
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2013 )
Vishay Siliconix
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2020 )
Vishay Siliconix

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]