Номер в каталоге
TSUS4300-ASZ
производитель
![Vishay](/logo/Vishay.png)
Vishay Semiconductors
![Vishay](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
DESCRIPTION
TSUS4300 is an infrared, 950 nm emitting diode in GaAs technology molded in a blue tinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1
• Dimensions (in mm): Ø 3
• Peak wavelength: λp = 950 nm
• High reliability
• Angle of half intensity: ϕ = ± 16°
• Low forward voltage
• Suitable for high pulse current operation
• Good spectral matching with Si photodetectors
• Package matches with detector TEFT4300
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS
• Infrared remote control and free air transmission systems with low forward voltage and small package requirements
• Emitter in transmissive sensors
• Emitter in reflective sensors
Номер в каталоге
Компоненты Описание
PDF
производитель
Infrared Emitting Diode, 950 nm, GaAs
Vishay Siliconix
Infrared Emitting Diode, 950 nm, GaAs
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2015 )
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2007 )
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2009 )
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2009 )
Vishay Semiconductors
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2009 )
Vishay Siliconix
Infrared Emitting Diode, 950 nm, GaAs ( Rev : 2013 )
Vishay Siliconix