производитель
Vishay Semiconductors
DESCRIPTION
TSHG8200 is an infrared, 830 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Peak wavelength: λp = 830 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 18 MHz
• Good spectral matching with CMOS cameras
• Lead (Pb)-free component in accordance with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras (illumination)
• High speed IR data transmission
• Smoke-automatic fire detectors
Номер в каталоге
Компоненты Описание
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производитель
High Speed Infrared Emitting Diode, RoHS Compliant, 830 nm, GaAlAs Double Hetero ( Rev : 2008 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, RoHS Compliant, 830 nm, GaAlAs Double Hetero ( Rev : 2008 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero ( Rev : 2013 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
Vishay Semiconductors
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
Vishay Semiconductors
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
Vishay Semiconductors
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero ( Rev : 2009 )
Vishay Semiconductors
