BVCEO = - 32VIc = - 1AVCE (SAT), =- 0.15V(typ.) @Ic / Ib =- 0.5A /- 50mA
FEATUREs◇ Low VCE (SAT).◇ Excellent DC current gain characteristics
Structure◇ Epitaxial planar type.◇ PNP silicon transistor