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TPD1032F(2006) Даташит - Toshiba

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TPD1032F

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2-IN-1 Low-Side Power Switch for Motor, Solenoid and Lamp Drive

The TPD1032F is a 2-IN-1 low-side switch.
The IC has a vertical MOSFET output which can be directly driven from a CMOS or TTL logic circuit (e.g., an MPU). The IC is equipped with intelligent self-protection functions.


FEATUREs
• Two built-in power IC chips with a new structure combining a control block and a vertical power MOSFET (L2-π-MOS) on each chip.
• Can directly drive a power load from a CMOS or TTL logic.
• Built-in protection circuits against overvoltage (active clamp), overtemperature (thermal shutdown), and overcurrent (current limiter).
• Low Drain-Source ON-resistance: RDS (ON) = 0.4 Ω (max) (@VIN = 5 V, ID = 1 A, Tch = 25°C)
• Low Leakage Current: IDSS = 10 μA (max) (@VIN = 0 V, VDS = 20 V, Tch = 25°C)
• Low Input Current: IIN = 300 μA (max) (@VIN = 5 V, Tch = -40~ 110°C)
• 8-pin SOP package for surface with embossed-tape packing.

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производитель
Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
Toshiba
Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit ( Rev : 2008 )
Toshiba
Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
Toshiba
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
Toshiba
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit ( Rev : 2002 )
Toshiba
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
Toshiba
Toshiba Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
Toshiba
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit ( Rev : 2002 )
Toshiba
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
Toshiba
TOSHIBA Intelligent Power Device Silicon Monolithic Power MOS Integrated Circuit
Toshiba

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