Q1:TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE(U－ MOSⅢ )
Q2:TOSHIBA INCLUDES SCHOTTKY BARRIER DIODE FIELD EFFECT TRANSISTOR SILICON
N CHANNEL MOS TYPE(U－ MOSⅢ )

DC-DC CONVERTER
Notebook PC
Portable Machines and Tools

• Includes Schottky Barrier Diode Type. (Q2)
   Low Forward Voltage: VDSF=0.6V(Max.)
• Small footprint due to small and thin package.
• High Speed Switching.(Q1)
• Small Gate Charge.(Q1): Qg＝ 17nC(Typ.)
• Low drain-source ON resistance(Q2) RDS (ON) = 13 mΩ (typ.)
• High forward transfer admittance(Q2): |Yfs| = 11 S (typ.)
• Low leakage current. (Q1): IDSS = 10 µA(Max.) (VDS = 30 V)
                                     (Q2): IDSS = 100 µA(Max.) (VDS = 30 V)
• Enhancement-mode
   : (Q1) Vth = 1.1~2.3 V (VDS = 10 V, ID = 1 mA)
   : (Q2) Vth = 1.1~2.3 V (VDS = 10 V, ID = 1 mA)