TPC8202 Даташит - Toshiba
Номер в каталоге
TPC8202
Компоненты Описание
Other PDF
no available.
PDF
page
7 Pages
File Size
336.2 kB
производитель
Toshiba
Lithium Ion Battery Applications
Portable Equipment Applications
Notebook PCs
• 2.5-V Gate drive
• Small footprint due to small and thin package
• Low drain−source ON resistance : RDS (ON) = 41 mΩ (typ.)
• High forward transfer admittance : |Yfs| = 9 S (typ.)
• Low leakage current : IDSS = 10 µA (max) (VDS = 20 V)
• Enhancement−mode : Vth = 0.5~1.1 V (VDS = 10 V, ID = 200 µA)
Номер в каталоге
Компоненты Описание
PDF
производитель
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2005 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2006 )
Toshiba
Share Link: