datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Toshiba  >>> TPC6108 PDF

TPC6108(2004) Даташит - Toshiba

TPC6108 image

Номер в каталоге
TPC6108

Other PDF
  2008   lastest PDF  

PDF
DOWNLOAD     

page
4 Pages

File Size
61.7 kB

производитель
Toshiba
Toshiba Toshiba

Notebook PC Applications
Portable Equipment Applications

• Small footprint due to small and thin package
• Low drain-source ON resistance: RDS (ON) = 50 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 7.4 S (typ.)
• Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)
• Enhancement-model: Vth = −0.8 to −2.0 V
                                     (VDS = −10 V, ID = −1 mA)


Номер в каталоге
Компоненты Описание
PDF
производитель
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V) ( Rev : 2009 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS-V)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (U-MOS II) ( Rev : 2000 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOS VI) ( Rev : 2011 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
Toshiba

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]