TPC6102 Даташит - Toshiba
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TPC6102
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7 Pages
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Notebook PC Applications
Portable Equipment Applications
• Low drain-source ON resistance: RDS (ON) = 48 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 6 S (typ.)
• Low leakage current: IDSS = −10 μA (max) (VDS = −30 V)
• Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Номер в каталоге
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производитель
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) ( Rev : 2007 )
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) ( Rev : 2002 )
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) ( Rev : 2002 )
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TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII) ( Rev : 2004 )
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TOSHIBA Field Effect Transistor Silicon P/N Channel MOS Type (P Channel U-MOSII/N Channel U-MOSII)
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