Transistor Inverter
Inverter For Air Conditionor
IGBT Gate Drive
Power MOS FET Gate Drive

The TOSHIBA TLP250 consists of a GaAlAs light emitting diode and a integrated photodetector.
This unit is 8−lead DIP package.
TLP250 is suitable for gate driving circuit of IGBT or power MOS FET.

• Input threshold current: IF=5mA(max.)
• Supply current (ICC): 11mA(max.)
• Supply voltage (VCC): 10−35V
• Output current (IO): ±1.5A (max.)
• Switching time (tpLH/tpHL): 1.5µs(max.)
• Isolation voltage: 2500Vrms(min.)
• UL recognized: UL1577, file No.E67349
• Option (D4) type
   VDE approved: DIN VDE0884/06.92,certificate No.76823
   Maximum operating insulation voltage: 630VPK
   Highest permissible over voltage: 4000VPK
   (Note) When a VDE0884 approved type is needed,
              please designate the "option (D4)"
• Creepage distance: 6.4mm(min.)
   Clearance: 6.4mm(min.)