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TK6A65D Даташит - Toshiba

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TK6A65D

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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π -MOSⅦ)

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Switching Regulator Applications

• Low drain-source ON resistance: RDS (ON) = 0.95 Ω (typ.)
• High forward transfer admittance: ⎪Yfs⎪ =4.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 650 V)
• Enhancement-mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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Компоненты Описание

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производитель

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SSM3K301T

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )

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