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TK6A60D Даташит - Toshiba

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TK6A60D

Компоненты Описание

Silicon N Channel MOS Type (π -MOSⅦ ) Field Effect Transistor

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2008

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6 Pages

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239.4 kB

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Toshiba

Switching Regulator Applications

• Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.)
• High forward transfer admittance: |Yfs| = 3.0 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

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