Toshiba TK5A500 Даташит, TK5A500 PDF, даташитов

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TK5A500 Даташит - Toshiba

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TK5A500

Компоненты Описание

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type

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Search Part number : TK5A500 -> Correct Part number : TDTK5A50D

• Low drain-source ON-resistance: RDS (ON)= 1.3 Ω(typ.)

• High forward transfer admittance: ⎪Yfs⎪= 3.0 S (typ.)

• Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)

• Enhancement mode: Vth= 2.4 to 4.4 V (VDS= 10 V, ID= 1 mA)

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Компоненты Описание

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производитель

SSM3K329R

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2010 )

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SSM6K202FE

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )

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SSM6N35FE

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2008 )

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SSM6K404TU

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )

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SSM3K324R

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type ( Rev : 2012 )

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SSM6N37CTD

TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type

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SSM6N43FU

TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type

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SSM6N29TU

TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type

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SSM3K123TU

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type

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SSM3K301T

TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type ( Rev : 2007 )

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