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TK56E12N1(2012) Даташит - Toshiba

TK56E12N1 image

Номер в каталоге
TK56E12N1

Компоненты Описание

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9 Pages

File Size
257.2 kB

производитель
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Features
(1) Low drain-source on-resistance: RDS(ON) = 5.8 mΩ (typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)


APPLICATIONs
• Switching Voltage Regulators


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