datasheetbank_Logo
Технический паспорт Поисковая и бесплатно техническое описание Скачать
HOME  >>>  Toshiba  >>> TK40A06N1 PDF

TK40A06N1 Даташит - Toshiba

TK40A06N1 image

Номер в каталоге
TK40A06N1

Компоненты Описание

Other PDF
  2012  

PDF
DOWNLOAD     

page
9 Pages

File Size
233.4 kB

производитель
Toshiba
Toshiba Toshiba

Features
(1) Low drain-source on-resistance: RDS(ON) = 8.4 mΩ (typ.) (VGS = 10 V)
(2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
(3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA)


APPLICATIONs
• Switching Voltage Regulators


Номер в каталоге
Компоненты Описание
PDF
производитель
MOSFETs Silicon N-channel MOS (U-MOSVIII-H) ( Rev : 2012 )
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H) ( Rev : 2012 )
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H) ( Rev : 2014 )
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H)
Toshiba
MOSFETs Silicon N-channel MOS (U-MOSVIII-H) ( Rev : 2012 )
Toshiba

Share Link: GO URL

EnglishEnglish Korean한국어 Chinese简体中文 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]