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TK3R1P04PL(2021) Даташит - Toshiba

TK3R1P04PL image

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TK3R1P04PL

Компоненты Описание

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page
9 Pages

File Size
495.2 kB

производитель
Toshiba
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Features
(1) High-speed switching
(2) Small gate charge: QSW = 19 nC (typ.)
(3) Small output charge: Qoss = 42 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)
(6) Enhancement mode: Vth = 1.4 to 2.4 V (VDS = 10 V, ID = 0.5 mA)


APPLICATIONs
• High-Efficiency DC-DC Converters
• Switching Voltage Regulators
• Motor Drivers


Номер в каталоге
Компоненты Описание
PDF
производитель
MOSFETs Silicon N-channel MOS (U-MOSIX-H)
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MOSFETs Silicon N-channel MOS (U-MOSIX-H)
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MOSFETs Silicon N-channel MOS (U-MOSIX-H)
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MOSFETs Silicon N-channel MOS (U-MOSIX-H)
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MOSFETs Silicon N-channel MOS (U-MOSIX-H)
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MOSFETs Silicon N-channel MOS (U-MOSIX-H)
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MOSFETs Silicon N-channel MOS (U-MOSIX-H)
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MOSFETs Silicon N-channel MOS (U-MOSIX-H)
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MOSFETs Silicon N-channel MOS (U-MOSIX-H)
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MOSFETs Silicon N-channel MOS (U-MOSIX-H)
Toshiba

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