Darlington Complementary Silicon Power Transistors

Designed for general−purpose amplifier and low frequency switching applications.

FEATUREs
• High DC Current Gain −
                     Min hFE = 1000 @ IC
                                   = 5.0 A, VCE = 4 V
• Collector−Emitter Sustaining Voltage − @ 30 mA
                    VCEO(sus) = 60 Vdc (Min) − TIP140, TIP145
                                       = 80 Vdc (Min) − TIP141, TIP146
                                      = 100 Vdc (Min) − TIP142, TIP147
• Monolithic Construction with Built−In Base−Emitter Shunt Resistor
• These are Pb−Free Devices*