Description
The TriQuint TGF4250-SCC is a single gate 4.8 mm discrete GaAs Heterostructure Field Effect Transistor (HFET) designed for high efficiency power applications up to 10.5 GHz in Class A and Class AB operation. Typical performance at 2 GHz is 34 dBm power output, 13 dB gain, and 53% PAE.
Bond pad and backside metallization is gold plated for compatibility with eutectic alloy attach methods as well as thermocompression and thermosonic wire bonding processes. The TGF4250-SCC is readily assembled using automatic equipment. For an Application Note on the use of HFETs, refer to the TriQuint website for the Millimeter Wave Division.

KEY FEATUREs and Performance
• Nominal Pout of 34 dBm at 8.5 GHz
• Nominal Gain of 8.5 dB at 8.5 GHz
• Nominal PAE of 53% at 8.5 GHz
• Suitable for high reliability applications
• 4800 µm x 0.5 µm FET
• Chip dimensions: 0.61 x 1.37 x 0.1 mm (0.024 x 0.054 x 0.004 in)
• Bias at 8 Volts, 384 mA

Primary Applications
• Cellular Base Stations
• High-reliability space
• Military