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TE28F400B3T110 Даташит - Intel

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TE28F400B3T110

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Intel
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INTRODUCTION
This datasheet contains the specifications for the Advanced Boot Block flash memory family, which is optimized for low power, portable systems. This family of products features 1.65 V–2.5 V or 2.7 V– 3.6 V I/Os and a low VCC/VPP operating range of 2.7 V–3.6 V for read, program, and erase operations.
   
■ Flexible SmartVoltage Technology
    - 2.7 V–3.6 V Read/Program/Erase
    - 12 V VPP Fast Production
        Programming
■ 2.7 V or 1.65 V I/O Option
    - Reduces Overall System Power
■ High Performance
    - 2.7 V–3.6 V: 90 ns Max Access Time
    - 3.0 V–3.6 V: 80 ns Max Access Time
■ Optimized Block Sizes
    - Eight 8-KB Blocks for Data,
        Top or Bottom Locations
    - Up to Sixty-Three 64-KB Blocks for
        Code
■ Block Locking
    - VCC-Level Control through WP#
■ Low Power Consumption
    - 10 mA Typical Read Current
■ Absolute Hardware-Protection
    - VPP = GND Option
    - VCC Lockout Voltage
■ Extended Temperature Operation
    - –40 °C to +85 °C
■ Flash Data Integrator Software
    - Flash Memory Manager
    - System Interrupt Manager
    - Supports Parameter Storage,
        Streaming Data (e.g., Voice)
■ Automated Program and Block Erase
    - Status Registers
■ Extended Cycling Capability
    - Minimum 100,000 Block Erase
        Cycles Guaranteed
■ Automatic Power Savings Feature
    - Typical ICCS after Bus Inactivity
■ Standard Surface Mount Packaging
    - 48-Ball µBGA* Package
    - 48-Lead TSOP Package
    - 40-Lead TSOP Package
■ Footprint Upgradeable
    - Upgrade Path for 4-, 8-, 16-, and 32-
        Mbit Densities
■ ETOX™ VI (0.25 µ) Flash Technology
   

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