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TC1101V Даташит - Transcom, Inc.

TC1101V image

Номер в каталоге
TC1101V

Компоненты Описание

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2 Pages

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80.1 kB

производитель
TRANSCOM
Transcom, Inc. TRANSCOM

DESCRIPTION
The TC1101V is the same as TC1101 expect via holes in the source pads for reducing the grounding inductance. It can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier application including a wide range of commercial and military application. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.


FEATURES
Via holes for source grounding
Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
High Associated Gain: Ga = 13 dB Typical at 12 GHz
High Dynamic Range: 1 dB Compression Power P-1 = 18.5 dBm at 12 GHz
Breakdown Voltage: BVDGO ≥ 9 V
Lg = 0.25 µm, Wg = 160 µm
All-Gold Metallization for High Reliability
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested

Page Link's: 1  2 

Номер в каталоге
Компоненты Описание
PDF
производитель
Low Noise and Medium Power GaAs FETs ( Rev : 2002 )
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Low-Noise GaAs FETs ( Rev : 2005 )
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Low-Noise GaAs FETs
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Super Low Noise GaAs FETs ( Rev : 2002 )
Transcom, Inc.

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