Номер в каталоге
T14L1024N-10W
производитель
![TMT](/logo/TMT.png)
Taiwan Memory Technology
![TMT](data:image/gif;base64,R0lGODlhAQABAIAAAAAAAP///yH5BAEAAAAALAAAAAABAAEAAAIBRAA7)
GENERAL DESCRIPTION
The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for use in high performance memory applications such as main memory storage and high speed communication buffers. Fabricated using high performance CMOS technology, access times down to 10ns are achieved.
FEATURES
• Fast Address Access Times : 10/12/15ns
• Single 3.3V ±0.3V power supply
• Center power/ground pin configuration
• Low Power Consumption : 110/105/100mA
• TTL I/O compatible
• 2.0V data retention mode
• Automatic power-down when deselected
• Available packages :
- 32-pin 300 mil and 400 mil SOJ
- 32-pin TSOP 8x13.4mm and 8x20mm
- 36-Ball CSP (8x10mm)
Номер в каталоге
Компоненты Описание
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производитель
HIGH SPEED 128K x 8 CMOS STATIC RAM
Performance Semiconductor
128K x 8 HIGH-SPEED CMOS STATIC RAM
Integrated Silicon Solution
128K X 8 HIGH SPEED CMOS STATIC RAM
Taiwan Memory Technology
HIGH SPEED 128K x 8 CMOS STATIC RAM
Performance Semiconductor
128K x 8 HIGH-SPEED CMOS STATIC RAM
Integrated Silicon Solution
128K x 8 HIGH-SPEED CMOS STATIC RAM
Integrated Circuit Solution Inc
128K X 8 HIGH SPEED CMOS STATIC RAM
Taiwan Memory Technology
HIGH SPEED 128K x 8 CMOS STATIC RAM
Performance Semiconductor
128K x 8 HIGH-SPEED CMOS STATIC RAM
Integrated Silicon Solution
128K x 8 HIGH-SPEED CMOS STATIC RAM
Integrated Circuit Solution Inc