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STW33N60M2(2013) Даташит - STMicroelectronics

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STW33N60M2

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page
20 Pages

File Size
1.1 MB

производитель
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters.


FEATUREs
• Extremely low gate charge
• Lower RDS(on) x area vs previous generation
• MDmesh™ II technology
• Low gate input resistance
• 100% avalanche tested
• Zener-protected


APPLICATIONs
• Switching applications
• LCC converters, resonant converters


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производитель
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