STU410S Даташит - SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Номер в каталоге
STU410S
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5 Pages
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546.9 kB
производитель
SHENZHEN DOINGTER SEMICONDUCTOR CO., LTD.
Description：
This N-Channel MOSFET uses advanced trench technology and design to provide excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.
Features：
1) VDS=40V,ID=30A,RDS(ON)<20mΩ @VGS=10V
2) Low gate charge.
3) Green device available.
4) Advanced high cell denity trench technology for ultra Iow RDS(ON).
5) Excellent package for good heat dissipation.
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