STP11NM60(2018) Даташит - STMicroelectronics
Номер в каталоге
STP11NM60
Компоненты Описание
Other PDF
PDF
page
21 Pages
File Size
619.2 kB
производитель
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. They are therefore suitable for the most demanding high-efficiency converters.
FEATUREs
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
APPLICATIONs
• Switching applications
Номер в каталоге
Компоненты Описание
PDF
производитель
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