STI11NM80 Даташит - STMicroelectronics
Номер в каталоге
STI11NM80
Компоненты Описание
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page
22 Pages
File Size
902.3 kB
производитель
STMicroelectronics
Description
These N-channel Power MOSFETs are developed using STMicroelectronics revolutionary MDmesh™ technology, which associates the multiple drain process with the companys PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing STs proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to similar products on the market.
FEATUREs
■ Low input capacitance and gate charge
■ Low gate input resistance
■ Best RDS(on)*Qg in the industry
APPLICATIONs
■ Switching applications
Номер в каталоге
Компоненты Описание
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производитель
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