STH175N4F6-2AG Даташит - STMicroelectronics
Номер в каталоге
STH175N4F6-2AG
Компоненты Описание
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page
18 Pages
File Size
593.4 kB
производитель
STMicroelectronics
Description
These devices are N-channel Power MOSFETs developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFETs exhibit very low RDS(on) in all packages.
FEATUREs
• Designed for automotive applications and
AEC-Q101 qualified
• Very low on-resistance
• Very low gate charge
• High avalanche ruggedness
• Low gate drive power loss
APPLICATIONs
• Switching applications
Номер в каталоге
Компоненты Описание
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производитель
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