STF6N52K3 Даташит - STMicroelectronics
Номер в каталоге
STF6N52K3
Компоненты Описание
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no available.
PDF
page
22 Pages
File Size
1.1 MB
производитель
STMicroelectronics
Description
These devices are made using the SuperMESH3™ Power MOSFET technology that is obtained via improvements applied to STMicroelectronics’ SuperMESH™ technology combined with a new optimized vertical structure. The resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications.
FEATUREs
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
APPLICATION
Switching applications
Номер в каталоге
Компоненты Описание
PDF
производитель
N-channel 525 V, 1 Ω, 5 A, DPAK, TO-220FP SuperMESH3™ Power MOSFET ( Rev : 2008 )
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N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMESH3™ Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages
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