STF30NM60N(2008_09) Даташит - STMicroelectronics
Номер в каталоге
STF30NM60N
Компоненты Описание
Other PDF
PDF
page
18 Pages
File Size
618.9 kB
производитель
STMicroelectronics
Description
This series of devices is designed using the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest onresistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATION
■ Switching applications
Номер в каталоге
Компоненты Описание
PDF
производитель
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