STD3NM60N Даташит - STMicroelectronics
Номер в каталоге
STD3NM60N
Компоненты Описание
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PDF
page
15 Pages
File Size
900.9 kB
производитель
STMicroelectronics
Description
This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATIONs
■ Switching applications
Номер в каталоге
Компоненты Описание
PDF
производитель
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