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STD11NM60N(2006) Даташит - STMicroelectronics

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Номер в каталоге
STD11NM60N

Other PDF
  2007   2008   lastest PDF  

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page
17 Pages

File Size
463.2 kB

производитель
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

General Features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistancel


APPLICATIONs
■ Switching application


Номер в каталоге
Компоненты Описание
PDF
производитель
N-channel 600V - 0.85Ω - 4.6A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET ( Rev : 2007 )
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