STB8NM60N Даташит - STMicroelectronics
Номер в каталоге
STB8NM60N
Компоненты Описание
Other PDF
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PDF
page
19 Pages
File Size
667.8 kB
производитель
STMicroelectronics
Description
This series of devices implements second generation MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
APPLICATION
■ Switching applications
Номер в каталоге
Компоненты Описание
PDF
производитель
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