DESCRIPTION
This Power Mosfet is the latest development of STMicroelectronics unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

■ TYPICAL RDS(on) = 0.008 Ω
■ OPTIMIMIZED FOR HIGH SWITCHING OPERATIONS
■ LOW THRESHOLD DRIVE
■ LOGIC LEVEL GATE DRIVE

APPLICATIONS
■ LOW VOLTAGE DC-DC CONVERTERS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ HIGH EFFICIENCY SWITCHING CIRCUITS