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STB25NM60N-1(2007) Даташит - STMicroelectronics

STB25NM60N image

Номер в каталоге
STB25NM60N-1

Other PDF
  2005   lastest PDF  

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page
18 Pages

File Size
515.8 kB

производитель
ST-Microelectronics
STMicroelectronics ST-Microelectronics

Description
This series of devices is realized with the second generation of MDmesh™ Technology. This revolutionary MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters

General features
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistancel

Applications
■ Switching application

 

Номер в каталоге
Компоненты Описание
PDF
производитель
N-channel 500V - 0.250Ω - 12A - TO-220/FP - TO-247-I2/D2PAK Second generation MDmesh™ Power MOSFET ( Rev : 2007 )
STMicroelectronics
N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh™ Power MOSFET ( Rev : 2007 )
STMicroelectronics
N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH™ Power MOSFET
STMicroelectronics
N-channel 600V - 0.270Ω - 14A - D2/I2PAK - TO-220/FP - TO-247 Second generation MDmesh™ Power MOSFET
STMicroelectronics
N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh™ Power MOSFET
STMicroelectronics
N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh™ Power MOSFET
STMicroelectronics
N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh™ Power MOSFET
STMicroelectronics
N-CHANNEL 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET ( Rev : 2005 )
STMicroelectronics
N-CHANNEL 600V - 0.19 Ω - 17 A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET ( Rev : 2005 )
STMicroelectronics
N-channel 650V - 0.16Ω - 19A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh™ Power MOSFET
STMicroelectronics

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