Description
These N-channel 600 V Power MOSFET devices are made using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converter.

FEATUREs
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance

APPLICATION
   Switching applications