DESCRIPTION
The device is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability.
It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining a satisfactory RBSOA.

■ MEDIUM VOLTAGE CAPABILITY
■ NPN TRANSISTOR
■ LOW SPREAD OF DYNAMIC PARAMETERS
■ MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION
■ VERY HIGH SWITCHING SPEED

APPLICATIONS:
■ COMPACT FLUORESCENT LAMP (CFL)
■ ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING
■ SWITCH MODE POWER SUPPLIES