Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and high voltage capability.
It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

FEATUREs
• High voltage capability
• Low spread of dynamic parameters
• Very high switching speed

APPLICATIONs
• Electronic ballast for fluorescent lighting (CFL)
• SMPS for battery charger