SSM3J307T(2008) Даташит - Toshiba
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SSM3J307T
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○ Power Management Switch Applications
○ High-Speed Switching Applications
• 1.5 V drive
• Low ON-resistance: Ron = 83 mΩ (max) (@VGS = -1.5 V)
Ron = 56 mΩ (max) (@VGS = -1.8 V)
Ron = 40 mΩ (max) (@VGS = -2.5 V)
Ron = 31 mΩ (max) (@VGS = -4.5 V)
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