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SSH6N80AS Даташит - Samsung

SSH6N80AS image

Номер в каталоге
SSH6N80AS

Компоненты Описание

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page
6 Pages

File Size
275 kB

производитель
Samsung
Samsung Samsung

FEATURES
■ Avalanche Rugged Technology
■ Rugged Gate Oxide Technology
■ Lower Input Capacitance
■ Improved Gate Charge
■ Extended Safe Operating Area
■ Lower Leakage Current : 25 μA (Max.) @ VDS = 800V
■ Low RDS(ON) : 1.472 Ω (Typ.)

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Номер в каталоге
Компоненты Описание
PDF
производитель
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor
Advanced Power MOSFET
Fairchild Semiconductor

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