VDSS = 400V
ID25 = 10A
RDS(ON) = 0.53Ω

Description
StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout with planar stripe DMOS technology

■ Extremely high dv/dt capability
■ Low Gate Charge Qg results in Simple Drive Requirement
■ 100% avalanche tested
■ Gate charge minimized
■ Very low intrinsic capacitances
■ Very good manufacturing repeatability