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SSF7509 Даташит - ETC1

SSF7509 image

Номер в каталоге
SSF7509

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5 Pages

File Size
351.3 kB

производитель
ETC1
ETC1 ETC1

[SILIKRON]

Description:
The SSF7509 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the cell density and reduces the on-resistance; its typical Rdson can reduce to 6.2mohm.

Feathers:
Advanced trench process technology
Special designed for Convertors and power controls
High density cell design for ultra low Rdson
Fully characterized Avalanche voltage and current
Avalanche Energy 100% test  

Application:
Power switching application

Page Link's: 1  2  3  4  5 

Номер в каталоге
Компоненты Описание
PDF
производитель
Power switching application ID=60A BV=60V Rdson=14mΩ(max.)
Unspecified
Power switching application (ID=75A BV=75V Rdson=10mohm)
Silikron Semiconductor Co.,LTD.
80A, 80V N-CHANNEL POWER MOSFET
Unisonic Technologies
N–Channel enhancement mode trench power MOSFET
Unspecified
N–Channel enhancement mode trench power
Unspecified
high current N–Channel enhancement mode trench power MOSFET
Silikron Semiconductor Co.,LTD.
N-Channel UltraFET® Trench MOSFET 75V, 80A, 4.5mΩ ( Rev : 2002 )
Fairchild Semiconductor
Single N-channel Trench MOSFET 80V, 120A, 3.4mΩ
MagnaChip Semiconductor
80A, 75V N-CHANNEL POWER MOSFET
Unisonic Technologies
N-Channel UltraFET® Trench MOSFET 75V, 80A, 4.5mΩ
Fairchild Semiconductor

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