Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

FEATUREs and Benefits:
◾ Advanced trench MOSFET process technology
◾ Special designed for PWM, load switching and
   general purpose applications
◾ Ultra low on-resistance with low gate charge
◾ Fast switching and reverse body recovery
◾ 150℃ operating temperature