Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

FEATUREs and Benefits:
◾ Advanced MOSFET process technology
◾ Low On Resistance
◾ Low Gate Charge
◾ Fast switching and reverse body recovery