1-1. General Description
These Devices Employ The Schottky Barrier Principle in a Metal−to−Silicon Power Rectifier. Features Epitaxial Construction With Oxide Passivation and Metal Overlay Contact. Ideally Suited For Low Voltage, High Frequency Switching Power Supplies; Free Wheeling Diodes and Polarity Protection Diodes.

1-2. Feature List
● High Surge Current Capability
● Low Power Loss, High Efficiency
● Highly Stable Oxide Passivated Junction
● Low Forward Voltage Drop

1-3. Applications
● For Use In Low Voltage High Frequency
   Inverters, Freewheeling, DC/DC Converters,
   and Polarity Protection Applications.

1-4. Benefits
● Essentially No Switching Losses
● Higher Efficiency
● Reduction Of Heat Sink Requirements
● Parallel Devices Without Thermal Runaway
● Higher System Reliability Due To Lower Operating Temperatures