1. General Description
These Devices Employ The Schottky Barrier Principle in a Metal−to−Silicon Power Rectifier. Features Epitaxial Construction With Oxide Passivation and Metal Overlay Contact. Ideally Suited For Low Voltage, High Frequency Switching Power Supplies; Free Wheeling Diodes and Polarity Protection Diodes.

2. Feature List
● High Surge Current Capability
● Low Power Loss, High Efficiency
● Highly Stable Oxide Passivated Junction
● Low Forward Voltage Drop

3. Mechanical Characteristics
● Molded JEDEC Package
   - SMAJ / SOD-123FL
● Packing: Tape and Reel
● Flammability Rating UL 94V-0
● Halogen Free
● JEDEC MSL Classification :Level 1