Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.

FEATUREs
＊ Low Forward Voltage.
＊ Low Switching noise.
＊ High Current Capacity
＊ Guarantee Reverse Avalanche.
＊ Guard-Ring for Stress Protection.
＊ Low Power Loss & High efficiency.
＊ 150℃ Operating Junction Temperature
＊ Low Stored Charge Majority Carrier Conduction.
＊ Plastic Material used Carries Underwriters Laboratory Flammability Classification 94V-O
＊ ESD: 8KV(Min.) Human-Body Model
＊ In compliance with EU RoHs 2002/95/EC directives