Switchmode Full Plastic Dual SchottkyBarrier Power Rectifiers

Using the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art geometryfeatures epitaxial construction with oxide passivation and metal overlaycontact. Ideally suited for lowvoltage, high frequency rectification, or as free wheeling and polarityprotection diodes.

* LowForward Voltage.
* LowSwitching noise.
* High Current Capacity
* Guarantee Reverse Avalanche.
* Guard-Ring for Stress Protection.
* LowPower Loss & High efficiency.
* 150℃ Operating Junction Temperature
* LowStored Charge MajorityCarrier Conduction.
* Plastic Material used Carries Underwriters Laboratory